制造商: International Rectifier
产品种类: MOSFET
晶体管极性: P-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: +/- 20 V
Id - Continuous Drain Current: 6.5 A
Rds On - Drain-Source Resistance: 345 mOhms
配置: Single
最大工作温度: + 150 C
Pd - Power Dissipation: 25 W
封装 / 箱体: TO-39
商标: International Rectifier
Channel Mode: Enhancement
最小工作温度: - 55 C
典型关闭延迟时间: 140 ns
