SEVEN DARLINGTON ARRAYS

Overview ULN2003AN/ADR is a high voltage, high current Darlington tube array drive circuit, which contains seven groups of NPN Darlington tubes. The emitters of each group of Darlington tubes are connected together, and the open collector outputs. Mainly used in driving relays, electric hammers,

文件：671.41 Kbytes 页数：7 Pages

TGS

2K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC02B is a 2K-bit Electrically Erasable PROM. The device is organized as a single block of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5volts with standby and active currents of only 5µA and 1mA respectively. The IN24LC02B

文件：246.1 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.