IMX287LLR

CMOS Image Sensors with 3.45 μm and 6.9 μm Pixels and Global Shutter Function for Industrial and Sensing Applications ustrial

■Globalshutterfunction ■Highframerate ■Avarietyoffunctions(externaltriggermode,multipleexposurefunction, ROImode,multipleimagesensorsynchronizationfunction,etc.) ■Compactdevicesize(14mm×14mm) ■Expandedlineup(3.45μmpixeland6.9μmpixel,SubLVDS,MIPIinte

IMX287LQR

CMOSImageSensorswith3.45μmand6.9μmPixelsandGlobalShutterFunctionforIndustrialandSensingApplicationsustrial

■Globalshutterfunction ■Highframerate ■Avarietyoffunctions(externaltriggermode,multipleexposurefunction, ROImode,multipleimagesensorsynchronizationfunction,etc.) ■Compactdevicesize(14mm×14mm) ■Expandedlineup(3.45μmpixeland6.9μmpixel,SubLVDS,MIPIinte

IS287

1Wepoxysealtype

KDV287

VARIABLECAPACITANCEDIODESILICONEPITAXIALPLANARDIODE(UHFSHFTUNING)

UHFSHFTUNING. FEATURES •HighCapacitanceRatio:C2V/C25V=7.6(Typ.) •LowSeriesResistance:rS=1.9ή(Typ.) •ExcellentC-VCharacteristics,andSmallTrackingError. •UsefulforSmallSizeTuner.

KDV287

SiliconEpitaxialPlanarDiode

Features ●HighCapacitanceRatio:C2V/C25V=7.6(Typ.) ●LowSeriesResistance:rs=1.9Ω(Typ.) ●ExcellentC-VCharacteristics,andSmallTrackingError. ●UsefulforSmallSizeTuner.

KDV287E

VARIABLECAPACITANCEDIODESILICONEPITAXIALPLANARDIODE(UHFSHFTUNING)

UHFSHFTUNING. FEATURES •HighCapacitanceRatio:C2V/C25V=7.6(Typ.) •LowSeriesResistance:rS=1.9Ω(Typ.) •ExcellentC-VCharacteristics,andSmallTrackingError. •UsefulforSmallSizeTuner.

L-287

CommonModeInductor

LA287B-G-PF

LEDARRAY

LDQ-M287RI-USB

470nmBLUECHIPS,GRAYFACEWITHWHITESEGMENTS

LN287RPX

SquareType