CMOS Image Sensors with 3.45 μm and 6.9 μm Pixels and Global Shutter Function for Industrial and Sensing Applications ustrial

■ Global shutter function ■ High frame rate ■ A variety of functions (external trigger mode, multiple exposure function, ROI mode, multiple image sensor synchronization function, etc.) ■ Compact device size (14 mm × 14 mm) ■ Expanded lineup (3.45 μm pixel and 6.9 μm pixel, Sub LVDS, MIPI inte

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SonySony Corporation

索尼

全局快门方式图像传感器

Sony

索尼

1W epoxy seal type

文件：157.4 Kbytes 页数：1 Pages

TOSHIBA

东芝

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)

UHF SHF TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=7.6(Typ.) • Low Series Resistance : rS=1.9ή (Typ.) • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

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KEC

KEC(Korea Electronics)

Silicon Epitaxial Planar Diode

Features ● High Capacitance Ratio : C2V/C25V=7.6(Typ.) ● Low Series Resistance : rs=1.9 Ω(Typ.) ● Excellent C-V Characteristics, and Small Tracking Error. ● Useful for Small Size Tuner.

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KEXIN

科信电子