丝印：40R045M2；Package：PG-HSOF-8；CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.26003 Mbytes 页数：15 Pages

Infineon

英飞凌

CoolSiC ™ MOSFET 400 V G2，采用 TOLL（PG-HSOF-8）封装，45 mΩ

• 与 650 V SiC MOSFET 相比，FOM 更佳\n • 具有低 Qfr\n 的快速换向稳健二极管• 低 RDS(on) 温度依赖性\n • 栅极阈值电压，VGS(th) = 4.5 V\n • 支持单极驱动 (VGSoff=0)\n • 100% 雪崩测试\n • 开关速度可控性高\n • 高 dV/dt 操作期间过冲较低\n • .XT互连技术\n • 一流的热性能;

Infineon

英飞凌

CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.31157 Mbytes 页数：15 Pages

Infineon

英飞凌

INFINEON
TO-247

Infineon

英飞凌

上传：深圳市恒佳微电子有限公司

INFINEON/英飞凌
TO-247

INFINEON/英飞凌

上传：深圳市恒佳微电子有限公司