IMBG65R026M2H中文资料CoolSiC™数据手册Infineon规格书

描述 Description

The CoolSiC™ MOSFET 650 V, 26 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

特性 Features

• Excellent figures of merit (FOMs)
• Best-in-class RDS(on)
• High robustness and overall quality
• Flexible driving voltage range
• Support for unipolar driving (VGSoff=0)
• Best immunity against turn-on effects
• Improved package interconnect with .XT

优势:
• Enables BOM savings
• Maximizes the system performance per $
• Highest reliability
• Enables top efficiency and power density
• Ease-of-use
• Full compatibility with existing vendors
• Allows designs without fan or heatsink