IKB20N60T中文资料英飞凌数据手册PDF规格书
IKB20N60T规格书详情
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
产品属性
- 型号:
IKB20N60T
- 功能描述:
IGBT 晶体管 LOW LOSS DuoPack 600V 20A
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
2021+ |
PG-TO263-3 |
9600 |
原装现货,欢迎询价 |
询价 | ||
INFINEON |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
INFINEON/英飞凌 |
19+ |
2400 |
原装现货支持BOM配单服务 |
询价 | |||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INFINEON/英飞凌 |
23+ |
37825 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO-263 |
400 |
只做原厂渠道 可追溯货源 |
询价 | ||
Infineon |
23+ |
IKB20N60TATMA1 |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
INFINEON/英飞凌 |
22+ |
TO-263 |
14100 |
原装正品 |
询价 | ||
INFINEON |
23+24 |
DPAK(TO-252)(TO-263) |
49820 |
主营全系列二三极管、MOS场效应管、 |
询价 |