IKB15N60T中文资料英飞凌数据手册PDF规格书
IKB15N60T规格书详情
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
产品属性
- 型号：
IKB15N60T
- 功能描述：
IGBT 晶体管 LOW LOSS DuoPack 600V 15A
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
INFINEON/英飞凌 |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
INFINEON/英飞凌 |
25+ |
TO-263 |
32360 |
INFINEON/英飞凌全新特价IKB15N60T即刻询购立享优惠#长期有货 |
询价 | ||
NEC |
23+ |
MP-3TO-251 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
inf |
23+ |
NA |
1190 |
专做原装正品,假一罚百! |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-263-3 |
19850 |
原装正品,假一赔十 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-247 |
15000 |
英飞凌MOS管、IGBT大量有货 |
询价 | ||
INFINEON/英飞凌 |
14+ |
TO263 |
30 |
询价 | |||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
