IKB10N60T中文资料英飞凌数据手册PDF规格书
IKB10N60T规格书详情
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction cooking
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
产品属性
- 型号：
IKB10N60T
- 功能描述：
IGBT 晶体管 LOW LOSS DuoPack 600V 10A
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO263 |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6000 |
原装现货正品 |
询价 | ||
INFINEON |
23+ |
10A,600V |
20000 |
全新原装假一赔十 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO263 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
13880 |
公司只售原装,支持实单 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
8800 |
公司只作原装正品 |
询价 | ||
INFINEON |
17+ |
TO-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
