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IRFPS40N60KPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IXFK40N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK40N60

HiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFN40N60

HiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXGH40N60

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C) Applications ACmo

IXYS

IXYS Corporation

IXGH40N60A

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C) Applications ACmo

IXYS

IXYS Corporation

IXGH40N60B

HiPerFASTIGBT

HiPerFAST™IGBT LightspeedSeries

IXYS

IXYS Corporation

IXGH40N60C

HiPerFASTIGBTLightspeedSeries

Features InternationalstandardpackagesJEDECTO-247andsurfacemountableTO-268 Highcurrenthandlingcapability LatestgenerationHDMOS™process MOSGateturn-on -drivesimplicity Applications PFCcircuits Uninterruptiblepowersupplies(UPS) Switched-modeandr

IXYS

IXYS Corporation

IXGM40N60

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C) Applications ACmo

IXYS

IXYS Corporation

IXGM40N60A

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C) Applications ACmo

IXYS

IXYS Corporation

详细参数

  • 型号:

    IHW40N60RF

  • 功能描述:

    IGBT 晶体管 IH SeriesRev Conduct IGBT Monolithic Body

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
TO-247
1076
原厂订货渠道,支持BOM配单一站式服务
询价
INFINEON/英飞凌
25+
TO-247
32360
INFINEON/英飞凌全新特价IHW40N60RF即刻询购立享优惠#长期有货
询价
INFINEON
24+
TO-247
5000
只做原装公司现货
询价
Infineon
24+
NA
3392
进口原装正品优势供应
询价
INFINEON
25+23+
TO-247
35396
绝对原装正品全新进口深圳现货
询价
INF
2018+
26976
代理原装现货/特价热卖!
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
Infineon(英飞凌)
2447
PG-TO247-3
115000
240个/管一级代理专营品牌!原装正品,优势现货,长期
询价
Infineon
22+
NA
441
加我QQ或微信咨询更多详细信息,
询价
INFINEON/英飞凌
23+
TO-247
50000
全新原装正品现货,支持订货
询价
更多IHW40N60RF供应商 更新时间2025-7-25 23:00:00