丝印：H40R1353；Package：PG-TO247-3；Reverse conducting IGBT with monolithic body diode

Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswit

文件：1.72334 Mbytes 页数：15 Pages

Infineon

英飞凌

分立式IGBT

The 3rd generation of reverse conducting 1350 V, 40 A TRENCHSTOP™ RC-IGBT3 with monolithically integrated reverse conducting diode in a TO247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal pe • Best-in-class conduction properties in VCEsatand Vf\n• Lowest switching losses, highest efficiency\n• Excellent thermal behavior\n• Tj(max)= 175°C\n• Soft current turn-off waveforms for low EMI\n• Higher breakthrough voltage, VBR(min)of 1350 V\n\n优势:\n• Lowest power dissipation\n• Better thermal m;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1350V 80A 429W TO247-3

Infineon

英飞凌