1200 V、20 A IGBT 分立器件，带反并联二极管，采用 TO-247 封装

The 5th generation of reverse conducting 1200 V, 20 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications. The 20 A RC-H5 devices complement the previous generation of rever • Switching losses reduced by 20%\n• Very low conduction losses\n• Reduced turn-on current spike up to 10%\n• Tj(max) = 175°C\n• Soft current turn-off waveforms for low EMI\n\n优势:\n• Increased switching frequency\n• Lowest power dissipation\n• Better thermal management for higher reliability;

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Reverse Conducting IGBT with monolithic body diode

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Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 40A TO247-3

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TO247

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TO-247

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上传：深圳市创博伟业科技有限公司