IGW60N60H3

600 V IGBT in TO-247 package; • Low switching losses for high efficiency\n• Excellent VCE(sat)behavior thanks to the famous Infineon TRENCHSTOP™ technology\n• Fast switching behavior with low EMI emissions\n• Optimized diode for target applications, meaning further improvement in switching losses\n• Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behaviour\n• Short circuit capability 5µs\n• Offering Tj(max)of 175 °C\n• Packaged with and without freewheeling diode for increased design freedom\n\n优势:\n• Low switching and conduction losses\n• Very good EMI behavior\n• Can be used with a small gate resistor for reduced delay time and voltage overshoot\n• High current density\n• Best-in-class 600 V IGBT efficiency and EMI behavior\n;

High speed 600 V, 60 A single TRENCHSTOP™ IGBT3 in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.\n

IGW60N60H3

丝印：G60H603；Package：PG-TO247-3；High speed IGBT in Trench ahnd Fieldstop technology

IGW60N60H3FKSA1

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH 600V 80A TO247-3

IKW60N60H3

600Vhighspeedswitchingseriesthirdgeneration

IHLP2525AHERR10M01

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