IGC04R60D中文资料英飞凌数据手册PDF规格书

1.1 Features

 Thin-film-SOI-technology

 Insensitivity of the bridge output to negative transient voltages up to -50V

given by SOI-technology

 Maximum blocking voltage +600V

 Power supply of the high side drivers via boot strap

 Integrated bootstrap functionality

 Separate control circuits for all six drivers

 CMOS and LSTTL compatible input (positive logic)

 Signal interlocking of every phase to prevent cross-conduction

 Detection of over-current and under-voltage supply

 'shut down' of all switches during error conditions

 65μs delay for fault clear after over current detection