Dual N-Channel Silicon Junction Field-Effect Transistor

Dual N-Channel Silicon Junction Field-Effect Transistor ● Very High Input Impedance Differential Amplifiers ● Electrometers

文件：72.21 Kbytes 页数：1 Pages

INTERFET

Very High Input Impedance

InterFET

Isolated RS422/RS485 Interface

Features • 3.3 V Input Supply Compatible • 25 ns Maximum Propagation Delay • 25 Mbps Data Rate • 1 ns Pulse Skew (typ.) • ±60 mA Driver Output Capability • Thermal Shutdown Protection • Meets or Exceeds ANSI 422-B, EIA 485-A and ITU Recommended V11 • Low EMC Footprint • −40 °C to +85 °C

文件：213.36 Kbytes 页数：12 Pages

NVE

Isolated RS422/RS485 Interface

Features • 3.3 V Input Supply Compatible • 25 ns Maximum Propagation Delay • 25 Mbps Data Rate • 1 ns Pulse Skew (typ.) • ±60 mA Driver Output Capability • Thermal Shutdown Protection • Meets or Exceeds ANSI 422-B, EIA 485-A and ITU Recommended V11 • Low EMC Footprint • −40 °C to +85 °C

文件：213.36 Kbytes 页数：12 Pages

NVE

N-CHANNEL POWER MOSFETS

文件：211.15 Kbytes 页数：5 Pages

SAMSUNG

三星