Isolated RS422/RS485 Interface

Features • 3.3 V Input Supply Compatible • 25 ns Maximum Propagation Delay • 25 Mbps Data Rate • 1 ns Pulse Skew (typ.) • ±60 mA Driver Output Capability • Thermal Shutdown Protection • Meets or Exceeds ANSI 422-B, EIA 485-A and ITU Recommended V11 • Low EMC Footprint • −40 °C to +85 °C

文件：213.36 Kbytes 页数：12 Pages

NVE

Isolated RS422 Transceiver, 2.5 kV, Wide SOIC

Galvanically-isolated full-duplex RS 422 interface in a 0.3\"-wide 16-pin SOIC package. 2500 Vrms isolation and 20 kV/microsecond transient immunity.

NVE

N-CHANNEL POWER MOSFETS

文件：211.15 Kbytes 页数：5 Pages

SAMSUNG

三星

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

文件：157.18 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for appli

文件：69.48 Kbytes 页数：7 Pages

INTERSIL