Differential Amplifiers

InterFET

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -32A@ TC=25℃ · Drain Source Voltage -VDSS= -600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 330mΩ(Max)@VGS= -10V DESCRIPTION · High-Side Switching · Push Pull Amplifiers · DC Choppers

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ISC

无锡固电

Power FET (Ceramic Package Type)

GENERAL DESCRIPTION The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; exte

文件：75 Kbytes 页数：6 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

Power FET (Ceramic Package Type)

GENERAL DESCRIPTION The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; exte

文件：75 Kbytes 页数：6 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社