CoolSiC™ Schottky Diode

The 1200V is the highest voltage family of Infineon SiC Schottky discrete diodes and is now being extended with the TO-247 package. The very good thermal characteristics of the TO-247 in combination with the low V f of the 1200V diodes make it particularly suitable in power applications where relati ·Benchmark switching behavior\n ·No reverse recovery charge\n ·Temperature independent switching behavior\n ·High operating temperature (T j max 175°C) ;

Infineon

英飞凌

thinQ!TM SiC Schot tky Diode

文件：753.63 Kbytes 页数：11 Pages

INFINEON

英飞凌

Package：TO-247-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 1200V 15A TO247-3

INFINEON

英飞凌

SCHOTTKY BARRIER RECTIFIERS

文件：144.28 Kbytes 页数：2 Pages

MOSPEC

统懋

EMIPAK 1B PressFit Power Module 1200 V Silicon Carbide Single Phase Bridge, 30 A

FEATURES • SiC diode technology • Exposed Al2O3 substrate with low thermal resistance • Very high frequency operating • Low internal inductances • Qualified using AQG324 guideline as reference • PressFit pins locking technology PATENT(S): www.vishay.com/patents • Material categorization:

文件：440.23 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

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