VS-ENW30S120T

EMIPAK 1B PressFit Power Module 1200 V Silicon Carbide Single Phase Bridge, 30 A

FEATURES •SiCdiodetechnology •ExposedAl2O3substratewithlowthermal resistance •Veryhighfrequencyoperating •Lowinternalinductances •QualifiedusingAQG324guidelineasreference •PressFitpinslockingtechnology PATENT(S):www.vishay.com/patents •Materialcategorization:

VS-ENW30S120T

包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：POWER MODULE

Vishay General Semiconductor - Diodes Division

FGA30S120P

ShortedAnodeTMIGBT

FS30S120CT

30.0AmpereSurfaceMountDualSeriesConnectionUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS

IDW30S120

thinQ!TMSiCSchottkyDiode

S30S120CR

SCHOTTKYBARRIERRECTIFIERS