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IDT71V65603S150BGI	文件：496.4 Kbytes Page：26 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
71V65603S150BG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V65603S150BGG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V65603S150BGGI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V65603S150BQ	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V65603S150BQG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V65603S150BQGI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V65603S150BQI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V65603S150PFG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V65603S150PFGI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
IDT71V65603S150BG	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V65603S150BQ	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V65603S150BQI	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V65603S150PF	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V65603S150PFI	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	IDT71V65603S150BGI	IDT	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市毅创腾电子科技有限公司	IDT71V65603S150BQ	IDT	23+	165-CABGA(13x15)	9550	专业分销产品!原装正品!价格优势!	询价
深圳市兴灿科技有限公司	IDT71V65603S150BQ	IDT	23+	165-FBGA	3664	原装现货	询价
深圳市河锋鑫科技有限公司	IDT71V65603S150BQ	IDT	22+	165CABGA (13x15)	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IDT71V65603S150BQ	IDT	21+	165CABGA (13x15)	13880	公司只售原装,支持实单	询价
易创佳业科技（深圳）有限公司	IDT71V65603S150BQ	IDT	23+	165CABGA (13x15)	9000	原装正品，支持实单	询价
深圳市英科美电子有限公司	IDT71V65603S150BQG	IDT	2021+		2095	只做原装假一罚十	询价
深圳市百诺芯科技有限公司	IDT71V65603S150BQG	IDT	23+	NA	1218	原装正品代理渠道价格优势	询价
标准国际(香港)有限公司	IDT71V65603S150BQGI	IDT71V65603S150BQGI		17	17		询价
鑫勃源（上海北京青岛）有限公司	IDT71V65603S150PF	IDT	23+	MSOP8	18000		询价

更多IDT71V65603S150BGI供应商更新时间2024-4-27 9:01:00

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