IDT71V35761资料使用说明书库存现货瑞萨IDT-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IDT71V35761	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S166BG	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S166BGI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S166BQ	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S166BQI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S166PF	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S166PFI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S183BG	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT
IDT71V35761S183BGI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c 文件：282.83 Kbytes 页数：22 Pages	IDT	IDT

技术参数

存储器格式：
SRAM
技术：
SRAM - 同步
存储容量：
4.5Mb （128K x 36）
时钟频率：
166MHz
访问时间：
3.5ns
存储器接口：
并联
电压 - 电源：
3.135V ~ 3.465V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装
封装/外壳：
165-TBGA
供应商器件封装：
165-CABGA（13x15）

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福安瓯科技有限公司	IDT71V35761	IDT	25+	QFP	3386	品牌专业分销商,可以零售	询价
深圳市欧立现代科技有限公司	IDT71V35761	IDT	24+	QFP	6980	原装现货,可开13%税票	询价
深圳市佳鑫美电子科技有限公司	IDT71V35761		25+	BGA	2140	全新原装!现货特价供应	询价
深圳市华芯电子元器件有限公司	IDT71V35761	IDT	25+	BGA	500	优势渠道、优势价格	询价
深圳市益百分电子有限公司	IDT71V35761	xilinx	22+	QFP	6800		询价
深圳市宏捷佳电子科技有限公司	IDT71V35761	IDT	25+	BGA	6500	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市科芯源微电子有限公司	IDT71V35761	IDT	2026+	QFP	996880	只做原装,欢迎来电资询	询价
深圳诚思涵科技有限公司	IDT71V35761	IDT	24+	BGA	13718	只做原装公司现货库存	询价
深圳市澳亿芯电子科技有限公司	IDT71V35761	IDT	24+	QFP	12000	原装正品有挂就有货	询价
深圳市亚泰盈科电子有限公司	IDT71V35761	xilinx	25+	QFP	6000	全新现货	询价

更多IDT71V35761供应商更新时间2026-2-4 11:02:00

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