3rd Generation thinQ!TM SiC Schottky Diode

文件：297.78 Kbytes 页数：7 Pages

Infineon

英飞凌

3rd Generation thinQ!TM SiC Schottky Diode

文件：243.67 Kbytes 页数：7 Pages

Infineon

英飞凌

3rd Generation thinQ!TM SiC Schottky Diode

文件：243.67 Kbytes 页数：7 Pages

Infineon

英飞凌

CoolSiC™ Schottky Diode

The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same techn ·Benchmark switching behavior\n ·No reverse recovery charge\n ·Temperature independent switching behavior\n ·High operating temperature (T j max 175°C) ;

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 12A TO252-3

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 12A TO252-3

Infineon

英飞凌