Fast Switching EmCon Diode

文件：184.06 Kbytes 页数：8 Pages

Infineon

英飞凌

Fast Switching EmCon Diode

文件：673 Kbytes 页数：8 Pages

Infineon

英飞凌

Silicon Power Diode

The 600 V, 9 A emitter controlled silicon power diode in a TO-252 package has been primarily designed for motor drive applications up to 30kHz. • Lowest VFvalues\n• Softest diodes available on the market\n• Tj(max)of 175°C\n• Qualified according to JEDEC Standard\n• Cooler packages and higher efficiency\n• Excellent EMI behavior\n• Excellent trade- off between cost and performance\n• Low conduction losses\n• Easy paralleling\n\n优势:;

Infineon

英飞凌

Fast Switching EmCon Diode

文件：673 Kbytes 页数：8 Pages

Infineon

英飞凌

Low reverse recovery charge

文件：654.04 Kbytes 页数：8 Pages

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 19.3A TO252

Infineon

英飞凌