2nd generation thinQ SiC Schottky Diode

FEATURES: • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switchin behavior • No forward recovery • High surge current capability Applications: • SMPS, PFC, snubber

文件：59.09 Kbytes 页数：4 Pages

Infineon

英飞凌

2nd generation thinQ!TM SiC Schottky Diode

2nd generation thinQ!™ SiC Schottky Diode Features: ● Revolutionary Semiconductor Material - Silicon Carbide ● Switching Behaviour Benchmark ● No Reverse Recovery / No Forward Recovery ● Temperature Independent Switching Behaviour ● Qualified According to JEDEC1) Based on Tar

文件：110.56 Kbytes 页数：4 Pages

Infineon

英飞凌

2nd generation thinQ SiC Schottky Diode

Infineon

英飞凌

Chip Diode

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled D ·Revolutionary semiconductor material - silicon carbide\n ·Switching behaviour benchmark\n ·No Reverse Recovery / no forward recovery\n ·Temperature independent switching behaviour\n ·Qualified according to JEDEC based on target applications;

Infineon

英飞凌

Package：模具；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SIC 600V 8A SAWN WAFER

Infineon

英飞凌

Package：模具；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SIC 600V 8A SAWN WAFER

Infineon

英飞凌

Package：模具；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURPOSE SAWN WAFER

Infineon

英飞凌