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IRF820

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParalleling •

IRF

International Rectifier

IRF820

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF820

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技威世科技半导体

IRF820

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=2.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max) ·FastSwitchingSpeed ·SimpleDriveRequirements APPLICATIONS ·Highcurrent,highspeedswitching ·Swithmodepowersupplies(smps) ·

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF820

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF820

20A600VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

FCIFirst Components International

戈采戈采企业股份有限公司

IRF820

SEMICONDUCTORS

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etc未分类制造商etc2未分类制造商

IRF820

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF820A

PowerMOSFET(Vdss=500V,Rds(on)max=3.0ohm,Id=2.5A)

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCu

IRF

International Rectifier

详细参数

  • 型号:

    IB820H-R

  • 制造商:

    IBase Technology(USA) Inc.

  • 功能描述:

    FS, SOCKET478, 845GV, SUPPORT DDR, MPCIX1, W/ ICH LANX1, GMC - Bulk

供应商型号品牌批号封装库存备注价格
ST
23+
QFN
59922
##公司主营品牌长期供应100%原装现货可含税提供技术
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TDK-LAMBD
24+
DIP
500
TDK-LAMBDA电源专营现货原装正品专营
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TDK/东电化
1948+
MODULE
6852
只做原装正品现货!或订货假一赔十!
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TDK-LAMBDA
原厂封装
840
一级代理 原装正品假一罚十价格优势长期供货
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TDK
2023+
SMD
1699
安罗世纪电子只做原装正品货
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TDK-LAMBDA
20+
电源模块
335
就找我吧!--邀您体验愉快问购元件!
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PREMIER
23+
10000
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ALCTEL
24+
隔离器
90000
一级代理商进口原装现货、价格合理
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PDI
23+
SMD
50000
全新原装正品现货,支持订货
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PDI
21+
SMD
10000
原装现货假一罚十
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更多IB820H-R供应商 更新时间2025-5-24 14:08:00