IFRI820G

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.1A)

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.1A)

IGAP-820

IndustrialIEEE802.11ac/g/nwirelessaccesspoint

IGL820R

LockingDevices

IM820

Pb-free,RoHSandREACHcompliant

IQXO-820

CrystalClockOscillatorSpecification

IR-820

ImageRejectionMixers

IRF820

N-CHANNELPOWERMOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability

IRF820

N-CHANNEL500V-2.5ohm-2.5A-TO-220PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=2.5Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALAN

IRF820

N-CHANNELEnhancement-ModeSiliconGateTMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs2and2.5AMPERESrDS(on)=3OHM450and500VOLTS rDS(on)=4OHM450VOLTS

IRF820

N-ChannelPowerMOSFETs,3.0A,450V/500V