128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

文件：128 Kbytes 页数：9 Pages

Hynix

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128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

文件：128 Kbytes 页数：9 Pages

Hynix

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128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

文件：128 Kbytes 页数：9 Pages

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

文件：128 Kbytes 页数：9 Pages

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

文件：128 Kbytes 页数：9 Pages

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

文件：128 Kbytes 页数：9 Pages

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

文件：128 Kbytes 页数：9 Pages

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION\nThe HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for  high speed low power circuit technology. It is  particulary well\nsuited for used in  hi ·  Fully static operation and Tri-state output\n·  TTL compatible inputs and outputs\n·  Battery backup(L/LL-part)\n- 2.0V(min) data retention\n·  Standard pin configuration\n- 32pin 525mil SOP\n- 32pin 8x20mm TSOP-I (Standard);

SK hynix

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128Kx8bit CMOS SRAM, standby current 1 mA, 70ns

SK hynix

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128Kx8bit CMOS SRAM

SK hynix

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