HY628100BLLG-I技术资料参数库存现货海力士-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
HY628100BLLG-I	文件：175.71 Kbytes Page：10 Pages	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high 文件：175.71 Kbytes 页数：10 Pages	HYNIX 海力士	HYNIX
HM628100I	文件：91.14 Kbytes Page：17 Pages	Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) 文件：91.14 Kbytes 页数：17 Pages	RENESAS 瑞萨	RENESAS
HY628100A	文件：128 Kbytes Page：9 Pages	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used 文件：128 Kbytes 页数：9 Pages	HYNIX 海力士	HYNIX
HY628100AG	文件：128 Kbytes Page：9 Pages	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used 文件：128 Kbytes 页数：9 Pages	HYNIX 海力士	HYNIX

更多HY628100BLLG-I供应商更新时间2026-2-10 9:16:00