128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

文件：175.71 Kbytes 页数：10 Pages

Hynix

海力士

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

文件：175.71 Kbytes 页数：10 Pages

Hynix

海力士

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

文件：175.71 Kbytes 页数：10 Pages

Hynix

海力士

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

文件：175.71 Kbytes 页数：10 Pages

Hynix

海力士