T1/E1/CEPT/ISND-PRI变压器

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40 V, 6 A NPN high power bipolar transistor

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40 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

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40 V, 6 A PNP high power bipolar transistor

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