丝印：HY3210；Package：TO-3PM-3S；N-Channel Enhancement Mode MOSFET

文件：744.77 Kbytes 页数：10 Pages

HUAYI

华羿微电

Single N MOSFET(85V~125V)

Huayi

华羿微电

DOUBLE HETEROJUNCTION AIGAAS RED SUNLIGHT VIEWABLE DISPLAYS

文件：405.92 Kbytes 页数：5 Pages

QT

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nit

文件：87.65 Kbytes 页数：16 Pages

NEC

瑞萨

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components. With the addition of two capacitors and a resistor the devices provide drai

文件：387.69 Kbytes 页数：16 Pages

ZETEX