5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nit

文件：87.65 Kbytes 页数：16 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nit

文件：87.65 Kbytes 页数：16 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

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