5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current : ICC = 4.8 mA TYP. @ VCC = 5.0 V

文件：115.74 Kbytes 页数：14 Pages

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：309.02 Kbytes 页数：13 Pages

CEL

5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER

DESCRIPTION\nThe µPC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.FEATURES\n• Low current : ICC = 4.8 mA TYP. @ VCC = 5.0 V\n• Output power • Low current : ICC = 4.8 mA TYP. @ VCC = 5.0 V\n• Output power : PO (sat) = −1.0 dBm TYP. @ f = 1.0 GHz\n: PO (sat) = −3.5 dBm TYP. @ f = 2.2 GHz\n• High linearity : PO (1dB) = −6.5 dBm TYP. @ f = 1.0 GHz\n: PO (1dB) = −8.0 dBm TYP. @ f = 2.2 GHz\n• Power gain : GP = 22.0 dB TYP. @ f = 1.0 GHz\n: G;

Renesas

瑞萨

5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current : ICC = 4.8 mA TYP. @ VCC = 5.0 V

文件：115.74 Kbytes 页数：14 Pages

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：309.02 Kbytes 页数：13 Pages

CEL