IRF620

COLOURTELEVISION

IRF620A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.)

IRF620A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •LowRDS(on)=0.626W(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology

IRF620B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

IRF620FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS

IRF620FI

iscN-ChannelMOSFETTransistor

IRF620N

PowerMOSFET

IRF620PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF620PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

IRF620PBF

PowerMOSFET