IRF620

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS

IRF620

5.0A,200V,0.800Ohm,N-ChannelPowerMOSFET

5.0A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

IRF620

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.80ohm,ID=5.2A

IRF620

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

IRF620

PowerMOSFET

IRF620

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements

IRF620

PowerMOSFET

TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220ABcontributetoitswideacceptancethroughouttheindustry. FEATURES •DynamicdV/dtRating

IRF620

N-ChannelPowerMosfets

IRF620

SEMICONDUCTORS

IRF620

PowerMOSFET

FEATURES •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH