首页 >HV2203PJ-G>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.007ohm,Id=100A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A?? Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A?? Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=30VR DS(on)=0.007Ω ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRF International Rectifier | IRF |
详细参数
- 型号:
HV2203PJ-G
- 功能描述:
多路器开关 IC LO CHRG INJECTN 8Ch HIVLTG ANALOG SWITCH
- RoHS:
否
- 制造商:
Texas Instruments
- 通道数量:
1
- 开关数量:
4
- 开启电阻(最大值):
7 Ohms
- 传播延迟时间:
0.25 ns
- 工作电源电压:
2.3 V to 3.6 V
- 最大工作温度:
+ 85 C
- 安装风格:
SMD/SMT
- 封装/箱体:
UQFN-16
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICROCHIP微芯 |
1626+ |
PLCC28 |
1500 |
代理品牌 |
询价 | ||
Supertex |
2023+环保现货 |
PLCC-28 |
2580 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
SUPERTEX |
25+ |
PLCC |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
SUPERTEX |
2016+ |
BGA |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
SUPERTEX |
25+23+ |
BGA |
38603 |
绝对原装正品全新进口深圳现货 |
询价 | ||
SUPERTEX |
24+ |
BGA |
35200 |
一级代理分销/放心采购 |
询价 | ||
SUPERTEX |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
SUPERTEX |
24+ |
SMD16 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
SUPERTEX |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SUPERTEX |
21+ |
BGA |
10000 |
原装现货假一罚十 |
询价 |
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