11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width C

文件：234.59 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：780.1 Kbytes 页数：5 Pages

BYCHIP

百域芯

11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

文件：234.26 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Widt

文件：334.99 Kbytes 页数：9 Pages

INTERSIL

11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

文件：234.26 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体