isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC co

文件：373.14 Kbytes 页数：2 Pages

ISC

无锡固电

75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET

文件：195.8 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET

ONSEMI

安森美半导体

MOSFET ??Power, N-Channel, Ultrafet 100 V, 75 A, 8 m

文件：545.33 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：344 Kbytes 页数：9 Pages

INTERSIL

75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：195.45 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体