50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：218.7 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width

文件：110.08 Kbytes 页数：9 Pages

INTERSIL

N-Channel Logic Level UltraFET Power MOSFET 100 V, 50 A, 27 m廓 Packaging

Features • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：727.51 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

丝印：76639S；Package：TO-263AB；50A, 100V, 0.026 Ohm, N-Channel, Logic Level UltraFET짰 Power MOSFET

文件：395.89 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

100 V、51 A、23 mΩ、D2PAK、逻辑电平N 沟道 UltraFET®

N-Channel Logic Level UltraFET® MOSFET 100 V, 51 A, 23 mΩ 超低导通电阻 - rDS(ON)max = 0.026 Ω、VGS = 10 V\n 仿真模型 - 温度补偿式PSPICE®和SABER™ 电气模型 - SPICE 和 SABER 热阻抗模型 - www.fairchildsemi.com\n 峰值电流与脉宽曲线\n UIS额定值曲线\n 开关时间与 RGS曲线;

ONSEMI

安森美半导体

N 沟道，逻辑电平，UltraFET® Power MOSFET，100V，50A，26mΩ

N-Channel Logic Level UltraFET® Power MOSFET 100 V, 50 A, 26 mΩ •超低导通电阻\n•仿真模型\n•峰值电流与脉宽曲线\n•UIS 额定值曲线\n•开关时间与RGS曲线;

ONSEMI

安森美半导体