44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d

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44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d

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44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the dio • 44A, 50V\n• Low On-Resistance, rDS(ON) = 0.022Ω\n• Temperature Compensating PSPICE Model\n• Thermal Impedance SPICE Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

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44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the dio • 44A, 50V\n• Low On-Resistance, rDS(ON) = 0.022Ω\n• Temperature Compensating PSPICE® Model\n• Thermal Impedance SPICE Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

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