IP150

3AMPPOSITIVEADJUSTABLEVOLTAGEREGULATOR

IP150A

3AMPPOSITIVEADJUSTABLEVOLTAGEREGULATOR

IR-150

ImageRejectionMixers

IRC150

compacttypemetalcladwirewoundresistors

[RaRaohm] CompactTypeMetalCladWireWoundResistors

IRC150

MIKRONIRC35TOIRC150

TYPICALAPPLICATIONS SinglepointtemperaturecalibrationsofpointIRpyrometers Fixedmountandportablepyrometercalibrationverification

IRF150

N-CHANNELPOWERMOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

IRF150

N-ChannelPowerMOSFETs,40A,60V/100V

N-ChannelPowerMOSFET40A,60V/100V

IRF150

TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.055ohm,Id=38A)

TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF150

40A,100V,0.055Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRF150

HIGHVOLTAGEPOWERMOSFETDIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver