HWS540

NoexternalDCblockingcapacitorsrequired

IIRF540N

N-ChannelMOSFETTransistor

IIRF540Z

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.0265Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableopera

IIRFR540Z

N-ChannelMOSFETTransistor

IIRL540N

N-ChannelMOSFETTransistor

•DESCRITION •Itisintendedforgeneralpurposeswitchingapplications •FEATURES •Lowdrain-sourceon-resistance: RDS(on)≤44mΩ(max) •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoper

IIRL540N

iscN-ChannelMOSFETTransistor

IK-540A

ToshibaIK-540ACamera

Forhigh-resolutionimaginginchallenginglightingconditions,thereisonlyonechoice:TheToshibaIK-540A. Thisamazingcameradeliverstheabsolutebestimagingperformanceinlowlight.Howgood?ItisdocumentedtobeuptoTENTIMESaspowerfulinlowlightthanconventionalmonochromeca

IQXO-540

CrystalClockOscillatorSpecification

IQXO-540-AUTO

CrystalClockOscillatorSpecification

IRC540

PowerMOSFET(Vdss=100V,Rds(on)=0.077ohm,Id=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077Ohm

IRC540PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.077廓,ID=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077OhmLead-Free

IRF540

N-CHANNEL100V-0.055廓-22ATO-220LOWGATECHARGESTripFET??IIPOWERMOSFET

IRF540

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

IRF540

HEXFETPOWERMOSFET

ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. 1.Dynamicdv/dtRating 2.RepetitiveAvalancheRated 3.175°COperatingTemperature

IRF540

N-ChannelPowerMOSFETs,27A,60-100V

IRF540

N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET

N-CHANNEL100V-00.50Ω-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA

IRF540

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77mΩ GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- •d.c.t

IRF540

N-ChannelPowerMOSFET

ID(A)28 VDSS(V)100 RDS(ON)(Ω)0.077@VGS=10V QG(nC)max.72 DESCRIPTION TheNellIRF540areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofop

IRF540

N-ChannelPowerMOSFETs,27A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

IRF540

PowerMOSFET