Crystal Clock Oscillator Specification

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IQD

Crystal Clock Oscillator Specification

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IQD

Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm

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IRF

HEXFET POWER MOSFET ( VDSS=100V , RDS(on)=0.077廓 , ID=28A )

Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm Lead-Free

文件：1.12101 Mbytes 页数：9 Pages

IRF

N-channel TrenchMOS transistor

VDSS = 100 V ID = 23 A RDS(ON) ≤ 77 mΩ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. t

文件：86.08 Kbytes 页数：9 Pages

PHI

PHI