NP100P04PDG

ProductScoutAutomotive

NP100P04PDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NP100P04PLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D

NP100P04PLG

ProductScoutAutomotive

PJD100P04

40VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-20A

PJD100P04-AU

40VP-ChannelEnhancementModeMosfet

Features RDS(ON),VGS@-10V,ID@-20A

YFW100P04AD

-40VP-CHANNELENHANCEMENTMODEMOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YFW100P04NF

-40VP-CHANNELENHANCEMENTMODEMOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply