零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
StaticDrain-SourceOn-Resistance | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsth | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=16A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
24+ |
TSSOP |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
TI |
25+ |
SSOP |
6500 |
十七年专营原装现货一手货源,样品免费送 |
询价 | ||
TI |
24+ |
TSOP20 |
3600 |
询价 | |||
TI |
23+ |
3793 |
1021 |
全新原装现货 |
询价 | ||
TI |
00/01+ |
TSSOP |
1988 |
全新原装100真实现货供应 |
询价 | ||
2017+ |
TSSOP20 |
6528 |
只做原装正品假一赔十! |
询价 | |||
TI |
24+ |
TSSOP20 |
5000 |
全现原装公司现货 |
询价 | ||
TI |
23+ |
SSOP |
65480 |
询价 | |||
TI |
23+ |
SSOP |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
TI新貨 |
23+ |
SSOP20 |
50000 |
全新原装正品现货,支持订货 |
询价 |
相关规格书
更多- HT24C02
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