CMOS 8K 2-Wire Serial EEPROM

文件：160.32 Kbytes 页数：11 Pages

Holtek

合泰

CMOS 8K 2-Wire Serial EEPROM

(8TSSOP Package 限用产品 公告日 : 2018/05/02 生效日 : 2018/08/02)(8TSSOP Package 产品终止讯息)(8DIP Package 限用产品 公告日 : 2023/07/25 生效日 : 2023/10/25)The HT24LC08 is a 8K-bit serial read/write nonvolatile memory device using the CMOS floating gate process. Its 8192 bits of memory are organized into 1024 words and each • Operating voltage:\n• Low power consumption\n• Internal organization: 1024x8\n• Write cycle time: 5ms max.\n• Partial page write allowed\n• Write operation with built-in timer\n• 40-year data retention\n• 8-pin DIP/SOP package;

Holtek

合泰

CMOS 8K 2-Wire Serial EEPROM

文件：2.081719 Mbytes 页数：12 Pages

Holtek

合泰

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.

4K/8K 2.5V CMOS Serial EEPROMs

DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5µA and 1mA respectively. The

文件：246.3 Kbytes 页数：10 Pages

INTEGRAL

Integral Corp.