PJD100P04-AU

40V P-Channel Enhancement Mode Mosfet

Features RDS(ON),VGS@-10V,ID@-20A

PJD100P04-AU

低压MOSFET (20 - 40V , RDS(ON) < 1Ω);

PJD100P04-AU_L2_000A1

丝印：D100P04；Package：TO-252AA；40V P-Channel Enhancement Mode Mosfet

Features RDS(ON),VGS@-10V,ID@-20A

G100P04KA

P-ChannelEnhancementModePowerMOSFET

Description TheG100P04KAusesadvancedtrenchtechnologytoprovid eexcellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G100P04KH

P-ChannelEnhancementModePowerMOSFET

Description TheG100P04KHusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

NP100P04PDG

ProductScoutAutomotive

NP100P04PDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NP100P04PLG

ProductScoutAutomotive

NP100P04PLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D

PJD100P04

40VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-20A