HSK10N06资料datasheet下载行情报价HUASHUO-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HSK10N06	文件：300 bytes Page：1 Pages	MOSFET	HUASHUO 华朔半导体	HUASHUO
VNK10N06FM	文件：168.29 Kbytes Page：14 Pages	ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h 文件：168.29 Kbytes 页数：14 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNP10N06	文件：126.87 Kbytes Page：11 Pages	?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET 文件：126.87 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNP10N06FI	文件：168.29 Kbytes Page：14 Pages	ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h 文件：168.29 Kbytes 页数：14 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多HSK10N06供应商更新时间2026-10-16 9:06:00