ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

文件：168.29 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3 整包；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 TO220FP

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno

文件：466.81 Kbytes 页数：5 Pages

ADV

爱德微

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：224.35 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 10mΩ ID 100A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：230.25 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技