N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno

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ADV

爱德微

MOSFET

ADV

爱德微

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：224.35 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 10mΩ ID 100A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：230.25 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

N-Channel Enhancement Mode Power MOSFET

文件：749.32 Kbytes 页数：7 Pages

HMSEMI

华之美半导体